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| EIC2832-2 UPDATED 02/14/2006 2.80-3.20 GHz 2-Watt Internally Matched Power FET Excelics EIC2832-2 .827.010 .669 .120 MIN FEATURES * * * * * * * * 2.80- 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH Output Power at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ 550mA Gain at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ 550mA Gain Flatness f = 2.80-3.20GHz VDS = 10 V, IDSQ 550mA Power Added Efficiency at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ 550mA Drain Current at 1dB Compression f = 2.80-3.20GHz Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 3.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 32.5 11.0 TYP 33.5 12.0 MAX UNITS dBm dB 0.6 35 600 -43 -46 1000 -2.5 11 1250 -4.0 12 o dB % 700 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 21.6mA -3.6mA 32.5dBm 175 C -65 to +175 oC 12.5W o CONTINUOUS2 10V -4V 7.2mA -1.2mA @ 3dB Compression 175 oC -65 to +175 oC 12.5W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2006 |
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